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Journal of Nanomaterials
Volume 2014 (2014), Article ID 203963, 5 pages
http://dx.doi.org/10.1155/2014/203963
Research Article

Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs

1The 58th Research and Scientific Institute, China Electronic Technology Group Corporation, Wuxi 214035, China
2Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China

Received 25 March 2013; Accepted 7 August 2013; Published 2 January 2014

Academic Editor: Hua-Liang Zhang

Copyright © 2014 Wei Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Wei Huang, Nanzhong Hu, Zongguang Yu, and Haiou Li, “Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs,” Journal of Nanomaterials, vol. 2014, Article ID 203963, 5 pages, 2014. doi:10.1155/2014/203963