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Journal of Nanomaterials
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Journal of Nanomaterials
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2014
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Article
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Fig 5
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Research Article
Novel BCD Process Platform with Integrated Self-Extracted JTE Trench Technology for EL Drivers ICs
Figure 5
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characteristics of the VDNMOS (120 um) with different
voltage (start/stop/step: 0 V/5 V/1 V).