| Materials | Methods* | FP† | Reference | Year |
| Ar | 1 and 3 | | [66] | 1986 | Ar | 2 | | [46] | 1995 | Ar and Kr | 2 | | [45] | 1996 | Ar | 3 | | [67] | 2004 | Ar | 1 and 3 | | [102] | 2009 | Ar, Si thin films | 1 | | [92] | 2010 | C, Si, and Ge | 1 | | [43] | 1995 | C, isotope-doped C, Si, and Ge | 1 and 2 | | [51] | 2009 | C (Pure and natural) (extreme pressure) | 1 and 2 | | [62] | 2012 | C nanowire | 1 and 2 | | [64] | 2012 | Si (isotope-doped) | 1 | | [136] | 1999 | Si (isotope-doped) | 1 | | [91] | 2001 | SiC | 2 | | [48] | 2002 | Si and Ge | 1 | | [44] | 2003 | Si | 1 and 2 | | [60] | 2005 | Si and Ge | 2 | | [61] | 2007 | Si | 3 | | [143] | 2008 | Si (isotope-doped) | 2 | | [47] | 2009 | Si | 1 | | [107] | 2011 | Si | 1 | | [99] | 2012 | Si Nanowire | 3 | | [153] | 2009 | Si, Ge | 1 | | [110] | 2010 | Si/Ge, SLs | 1 and 2 | | [59] | 2004 | Si/Ge SLs | 1 | | [108] | 2011 | Si/Ge SLs | 1 | | [101] | 2013 | Si/Ge SLs | 1 | | [103] | 2013 | SiGe alloys with embedded nanoparticles | 2 | | [65] | 2011 | SiGe alloys | 1 | | [109] | 2011 | Si, Ge, and Si0.5Ge0.5 | 1 | | [100] | 2012 | Si/Ge, GaAs/AlAs, and SLs | 1 and 2 | | [50] | 2008 | Ge | 3 | | [154] | 2010 | Ge | 4 | | [151] | 2013 | Semiconductors (Groups IV, III–V, and II–VI) | 1 | | [117] | 2008 | Graphene | 1 and 2 | | [54] | 2010 | Graphene and graphite | 1 and 2 | | [55] | 2011 | Graphene (supported and suspended) | 4 | | [140] | 2012 | Graphene (free-standing and strained) | 1 | | [105] | 2012 | Graphene and graphite | 1 | | [111] | 2013 | CNT to graphene (diameter dependence) | 1 and 2 | | [53] | 2010 | CNT | 4 | | [157] | 2006 | CNT | 1 and 2 | | [52] | 2009 | CNT (empty and water-filled) | 4 | | [77] | 2010 | CNT (on amorphous silica) | 4 | | [152] | 2011 | BN (pristine and isotope-doped) | 1 and 2 | | [56] | 2011 | BN (multilayer and nanotubes) (pristine and isotope-doped) | 2 | | [58] | 2012 | Mg2 alloys (bulk and nanowire) | 2 | | [63] | 2012 | Compound semiconductors (Si, Ge, GaAs, Al-V, Ga-V, In-V, SiC, AlN, etc.) | 1 and 2 | | [112] | 2013 | Ionic solids (MgO, , and SrTiO3) | 2 | | [49] | 2011 | GaN (GaAs, GaSb, and GaP) (pristine and isotope-doped) | 1 and 2 | | [57] | 2012 | PbTe | 1 | | [104] | 2012 | PbTe | 4 | | [141] | 2011 | PbTe, PbSe, and | 1 | | [106] | 2012 | | 4 | | [142] | 2013 | Heusler | 3 | | [120] | 2011 | MgO | 4 | | [76] | 2009 | Polyethylene | 3 | | [155] | 2009 | Polyethylene | 3 | | [156] | 2009 | GaAs | 1 | | [118] | 2013 | GaAs/AlAs SLs | 1 | | [119] | 2012 |
|
|