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Journal of Nanomaterials
Volume 2014 (2014), Article ID 294385, 7 pages
http://dx.doi.org/10.1155/2014/294385
Research Article

Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution

Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Received 15 April 2014; Accepted 16 June 2014; Published 30 June 2014

Academic Editor: Anukorn Phuruangrat

Copyright © 2014 Muhamad Ikram Md Taib et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We report on the fabrication of porous GaAs (100) using three different acids, H2SO4, HF, and HCl, diluted in DMF based solutions. The mixture of H2SO4 with DMF showed the best porous structures in comparison to other acids. The concentration of the DMF solution was then varied for a fixed concentration of H2SO4. It was apparent that the different concentration of the DMF solvent gave different types of morphology of the porous GaAs. Furthermore, a higher current density improved the uniformity of the pores distribution. The best porous GaAs exhibited well-defined circular shaped pores with high uniformity. To the best of our knowledge, such structure produced in such manner has never been reported so far. Finally, the optimum etching conditions of the pores were proposed.