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Journal of Nanomaterials
Volume 2014 (2014), Article ID 294385, 7 pages
http://dx.doi.org/10.1155/2014/294385
Research Article

Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution

Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

Received 15 April 2014; Accepted 16 June 2014; Published 30 June 2014

Academic Editor: Anukorn Phuruangrat

Copyright © 2014 Muhamad Ikram Md Taib et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Muhamad Ikram Md Taib, Norzaini Zainal, and Zainuriah Hassan, “Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution,” Journal of Nanomaterials, vol. 2014, Article ID 294385, 7 pages, 2014. doi:10.1155/2014/294385