Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution

Figure 2

Surface morphology of porous GaAs etched with different types of etching solution for (a) sample A, (b) sample B, and (c) sample C, at current density, 𝐽 = ~25 mA/cm², and time, 𝑡 = 10 min.

(a)

(b)

(c)