294385.fig.003a
(a) 1 : 1
294385.fig.003b
(b) 1 : 3
294385.fig.003c
(c) 1 : 9
Figure 3: Surface morphology of porous GaAs with the variation of DMF concentration in the mixture of H2SO4 acid for (a) sample D, (b) sample E, and (c) sample F, at current density, = ~250 mA/cm2, and time,  min.