Figure 6: Surface morphology of porous GaAs with variation of current density of (a) 25 mA/cm^{2} (sample C), (b) 250 mA/cm^{2} (sample E), (c) 350 mA/cm^{2} (sample G), and (d) 250 mA/cm^{2} with improvement in current conductivity (sample H), at etching time, min.