Table 1: Details of the etching parameters for the porous GaAs samples.

Sample groupEtching solutionCurrent density,   (mA/cm2)

AHF : DMF (1 : 3)25
BHCl : DMF (1 : 3)25
CH2SO4 : DMF (1 : 3)25
DH2SO4 : DMF (1 : 1)250
EH2SO4 : DMF (1 : 3)250
FH2SO4 : DMF (1 : 9)250
GH2SO4 : DMF (1 : 3)350
HH2SO4 : DMF (1 : 3) with improved current conductivity250