Research Article
Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution
Table 1
Details of the etching parameters for the porous GaAs samples.
| | Sample group | Etching solution | Current density, (mA/cm2) |
| | A | HF : DMF (1 : 3) | 25 | | B | HCl : DMF (1 : 3) | 25 | | C | H2SO4 : DMF (1 : 3) | 25 | | D | H2SO4 : DMF (1 : 1) | 250 | | E | H2SO4 : DMF (1 : 3) | 250 | | F | H2SO4 : DMF (1 : 9) | 250 | | G | H2SO4 : DMF (1 : 3) | 350 | | H | H2SO4 : DMF (1 : 3) with improved current conductivity | 250 |
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