Optimization of the Electrodeposition Parameters to Improve the Stoichiometry of In₂S₃ Films for Solar Applications Using the Taguchi Method

Table 6

EDS data for In₂S₃ films grown at optimal values obtained by the Taguchi Method (confirmatory results).

Spectrum	Atomic %
	O	Si	S	Mo	In	Total	S/In
Spectrum 1	6.54	0.0	54.1	3.12	36.2	100.0	1.493
Spectrum 2	0.00	0.0	56.6	8.36	37.5	100.0	1.51
Spectrum 3	0.00	0.0	55.1	7.27	37.5	100.0	1.471
Spectrum 4	14.4	0.0	50.6	2.82	33.7	100.0	1.5
Spectrum 5	0.00	0.0	58.3	0.00	40.5	100.0	1.443
Spectrum 6	0.00	0.0	59.8	0.00	39.9	100.0	1.498
Spectrum 7	4.21	0.0	57.4	0.00	38.3	100.0	1.501
Spectrum 8	0.00	0.0	60.2	0.1	39.7	100.0	1.53
Mean	3.14	0.0	56.5	2.7	37.9	100.0	1.493
Max.	14.4	0.0	60.2	8.36	40.5
Min.	0.00	0.0	50.6	0.00	33.7