Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

<table>The Raman spectra of the poly-Si thin films using AIC with the capping layer for the annealing time of (a) 15, (b) 30, (c) 45, and (d) 60 min.</table>

Journal of Nanomaterials

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Figure 3: Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer 