Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

Figure 6

SEM images of the poly-Si thin films using AIC with the capping layer for annealing time of (a) 15, (b) 30, (c) 45, and (d) 60 min.

(a) 15 min

(b) 30 min

(c) 45 min

(d) 60 min