Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

Table 2

The electrical properties of the poly-Si thin films using AIC with the capping layer.

	Al; (nm)	a-Si (nm)	Substrate	Annealing temperature (°C)	Annealing time; (min)	Mobility; (μ, cm^2/V-s)	Sheet resistance; (Rs, Ω/□)	Grain size (um)
Kim et al. [6]	200	96	Glass	550	10~40	N/A	4500~5000	N/A
Nast et al. [7]	500	500	Glass	350~500	30	60~70	N/A	N/A
Nast et al. [9]	450~500	500	Glass	500	5~60	56.3	820	N/A
Widenborg et al. [19]	250~450		Glass	400	30	N/A	800~4000	N/A
Our results	30	100	ITO Glass	350	15~60	80~112	19~21	17~21