Temperature Effects on a-IGZO Thin Film Transistors Using HfO<sub>2</sub> Gate Dielectric Material

<table>(a) <svg height="15.25" id="M80" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 17.725 15.25" width="17.725" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> transfer characteristics of the a-IGZO TFTs with <svg height="16.3125" id="M82" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 36.9375 16.3125" width="36.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> gate dielectric with different annealing temperature. (b) A comparison of various parameters includes <svg height="15.4375" id="M83" style="vertical-align:-3.25792pt" version="1.1" viewbox="0 0 25.799999 15.4375" width="25.799999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> ratio, <svg height="15.4" id="M85" style="vertical-align:-3.21404pt" version="1.1" viewbox="0 0 17.4125 15.4" width="17.4125" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg>, and SS for a-IGZO TFTs with <svg height="16.3125" id="M87" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 36.9375 16.3125" width="36.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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</svg> gate dielectric.</table>

Journal of Nanomaterials

fig4

Figure 4

Figure 4: Temperature Effects on a-IGZO Thin Film Transistors Using HfO<sub>2</sub> Gate Dielectric Material 

Journal of Nanomaterials

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Figure 4

Temperature Effects on a-IGZO Thin Film Transistors Using HfO₂ Gate Dielectric Material