Temperature Effects on a-IGZO Thin Film Transistors Using HfO<sub>2</sub> Gate Dielectric Material

<table>AFM graph for a-IGZO TFTs with <svg height="16.3125" id="M88" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 36.9375 16.3125" width="36.9375" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,30.538,16.25)"><path d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" id="x32"></path></g>
</svg> gate dielectric with different annealing temperature.</table>

Journal of Nanomaterials

fig5

Figure 5

Figure 5: Temperature Effects on a-IGZO Thin Film Transistors Using HfO<sub>2</sub> Gate Dielectric Material 

Journal of Nanomaterials

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Figure 5

Temperature Effects on a-IGZO Thin Film Transistors Using HfO₂ Gate Dielectric Material