Temperature Effects on a-IGZO Thin Film Transistors Using HfO₂ Gate Dielectric Material

Table 2

The standard enthalpy of formation for HfO₂, In₂O₃, Ga₂O₃, and ZnO.

Standard enthalpy of formation	HfO2	In2O3	Ga2O3	ZnO
Δ𝐻𝑓^∘ (kJ/mol)	−1144.7	−925	−1089.1	−350.5