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Journal of Nanomaterials
Volume 2014 (2014), Article ID 409493, 7 pages
http://dx.doi.org/10.1155/2014/409493
Research Article

Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

1Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, 72570 Puebla, PUE, Mexico
2CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 Sur y Avenida San Claudio, Edificio 137, 72570 Puebla, PUE, Mexico
3Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 México, DF, Mexico
4Área Académica de Computación, ICBI, Universidad Autónoma del Estado de Hidalgo, Mineral de la Reforma, Hidalgo, Apartado Postal 42000, Mexico

Received 23 September 2013; Revised 11 November 2013; Accepted 6 December 2013; Published 6 January 2014

Academic Editor: Gon Namkoong

Copyright © 2014 F. Severiano et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Electroluminescent devices (ELD) based on junctions of indium doped zinc oxide (ZnO:In) and porous silicon layers (PSL) are presented in this work. PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching. PSL were coated with a ZnO:In film which was obtained by ultrasonic spray pyrolysis technique. Once obtained, this structure was optically and electrically characterized. When the devices were electrically polarized they showed stable electroluminescence (EL) which was presented as dots scattered over the surface. These dots can be seen with the naked eye. The observed EL goes from the 410 to 1100 nm, which is formed by different emission bands. The EL emission in the visible region was around 400 to 750 nm, and the emission corresponding to the infrared part covers the 750 to 1150 nm. The electrical characterization was carried out by current-voltage curves (I-V) which show a rectifying behavior of the devices. Observed electroluminescent dots are associated with the electron-hole injection into quantized states in PS as well as the emission from the ZnO:In film.