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Journal of Nanomaterials
Volume 2014 (2014), Article ID 409493, 7 pages
http://dx.doi.org/10.1155/2014/409493
Research Article

Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

1Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, 72570 Puebla, PUE, Mexico
2CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 Sur y Avenida San Claudio, Edificio 137, 72570 Puebla, PUE, Mexico
3Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 México, DF, Mexico
4Área Académica de Computación, ICBI, Universidad Autónoma del Estado de Hidalgo, Mineral de la Reforma, Hidalgo, Apartado Postal 42000, Mexico

Received 23 September 2013; Revised 11 November 2013; Accepted 6 December 2013; Published 6 January 2014

Academic Editor: Gon Namkoong

Copyright © 2014 F. Severiano et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

F. Severiano, G. García, L. Castañeda, J. M. Gracia-Jiménez, Heberto Gómez-Pozos, and J. A. Luna-López, “Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon,” Journal of Nanomaterials, vol. 2014, Article ID 409493, 7 pages, 2014. doi:10.1155/2014/409493