Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon

<table class="table-group" id="tab2"><tr><td><table class="table"><tr><td class="thead-hr" colspan="5"><hr/></td></tr><tr class="thead"><td align="left">Sample</td><td align="center">Average thickness (nm) ±5.0%</td><td align="center">Average transmittance (400–700 nm) (%)</td><td align="center">Electrical resistivity <svg height="16.049999" id="M20" style="vertical-align:-0.1638pt" version="1.1" viewbox="0 0 39.737499 16.049999" width="39.737499" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,26.363,7.613)"><path d="M535 230h-483v50h483v-50z" id="x2212"></path></g><g transform="matrix(.012,-0,0,-.012,33.347,7.613)"><path d="M285 378v-2q65 -13 102 -54.5t37 -97.5q0 -57 -30.5 -104.5t-74 -75t-85.5 -42t-72 -14.5q-31 0 -59.5 11t-40.5 23q-19 18 -16 36q1 16 23 33q13 10 24 0q58 -51 124 -51q55 0 88 40t33 112q0 64 -39 96.5t-88 32.5q-29 0 -64 -11l-6 29q77 25 118 57.5t41 84.5
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<g transform="matrix(.017,-0,0,-.017,.062,11.363)"><path d="M719 146l-18 -146h-243l-5 18q2 4 17 25t24 36l25 42t26.5 52.5t21 56.5t16 65t5.5 68q0 121 -55.5 194.5t-149.5 73.5q-95 0 -150 -72t-55 -199q0 -54 18.5 -114t36.5 -94t48.5 -82.5t32.5 -51.5l-7 -18h-244l-17 146l27 1q17 -49 31.5 -62t45.5 -13h89l-21 21t-26 26.5
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</svg>cm) ±5.0%</td><td align="center">Band gap (eV) ±5.0%</td></tr><tr><td class="thead-hr" colspan="5"><hr/></td></tr><tr><td align="left">ZnOIn/SLGS </td><td align="center">685</td><td align="center">53.11</td><td align="center">2.05</td><td align="center">3.44</td></tr><tr class="table-tr"><td colspan="5"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Journal of Nanomaterials

tab2

Table 2

Table 2: Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon 