Research Article
Design and Fabrication of Nanoscale IDTs Using Electron Beam Technology for High-Frequency SAW Devices
Table 1
Deposition parameters of AlN thin films.
| Target | Al (99.995%) | Substrate-to-target distance (mm) | 50 | Base pressure (Torr) | | Substrate temperature (°C) | 300 | RF power (W) | 200, 250, 300 | Sputtering pressure (mTorr) | 5, 10, 15 | N2/(N2 + Ar) | 60% | Time durations (hours) | 3 | Deposition rate | 667 nm/hour |
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