Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

<table><svg height="15.4" id="M72" style="vertical-align:-3.39066pt" version="1.1" viewbox="0 0 40.674999 15.4" width="40.674999" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M414 650l-6 -28q-63 -4 -78.5 -17.5t-27.5 -71.5l-77 -416q-11 -58 0.5 -71.5t77.5 -17.5l-5 -28h-275l8 28q63 4 79.5 18.5t27.5 70.5l80 416q11 57 -2 71t-81 18l6 28h273z" id="x1D43C"></path></g>
<g transform="matrix(.012,-0,0,-.012,7.487,15.187)"><path d="M530 686q-79 -330 -126 -595q-5 -24 4 -24q22 0 77 53l16 -24q-42 -49 -88 -78.5t-72 -29.5q-37 0 -19 83l21 99h-2q-62 -83 -153 -141q-65 -41 -97 -41q-28 0 -48 31.5t-20 91.5q0 71 32.5 144t88.5 118q36 30 94 52.5t94 22.5q38 0 68 -13l29 158q7 40 2 47.5t-38 7.5
h-35l1 26q39 4 76 13.5t58.5 17t27.5 7.5q16 0 9 -26zM387 375q-11 11 -38.5 20t-51.5 9q-45 0 -79 -23q-46 -32 -77.5 -107.5t-31.5 -143.5q0 -40 9.5 -58.5t23.5 -18.5q40 0 113.5 70t99.5 118z" id="x1D451"></path></g>
<g transform="matrix(.017,-0,0,-.017,14.713,11.112)"><path d="M300 253l-14 -55h-229l14 55h229z" id="x2D"></path></g><g transform="matrix(.017,-0,0,-.017,20.764,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,33.388,15.187)"><path d="M530 686q-79 -330 -126 -595q-5 -24 4 -24q22 0 77 53l16 -24q-42 -49 -88 -78.5t-72 -29.5q-37 0 -19 83l21 99h-2q-62 -83 -153 -141q-65 -41 -97 -41q-28 0 -48 31.5t-20 91.5q0 71 32.5 144t88.5 118q36 30 94 52.5t94 22.5q38 0 68 -13l29 158q7 40 2 47.5t-38 7.5
h-35l1 26q39 4 76 13.5t58.5 17t27.5 7.5q16 0 9 -26zM387 375q-11 11 -38.5 20t-51.5 9q-45 0 -79 -23q-46 -32 -77.5 -107.5t-31.5 -143.5q0 -40 9.5 -58.5t23.5 -18.5q40 0 113.5 70t99.5 118z" id="x1D451"></path></g>
</svg> characteristics n-type GNRFET, p-type, and n-type MOSFET for various gate voltages starting from <svg height="18.362499" id="M73" style="vertical-align:-5.76984pt" version="1.1" viewbox="0 0 47.712502 18.362499" width="47.712502" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.113)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.188)"><path d="M546 430q-14 -33 -37.5 -140t-38.5 -209q-29 -195 -156 -289q-29 -21 -70 -37t-78 -16q-62 0 -102.5 37t-40.5 69q0 27 26 48q19 15 25 -3q13 -43 46.5 -69t87.5 -26q55 0 83 21q29 22 50 65t43 140q14 64 29 163h-2q-55 -81 -149 -152q-59 -44 -102 -44q-23 0 -43.5 30
t-20.5 85q0 74 32.5 145.5t84.5 117.5q40 35 100 58.5t117 23.5q21 0 65 -8q30 -6 44 -6zM456 386q-40 16 -81 16q-29 0 -64 -13q-42 -17 -85 -97q-19 -36 -31.5 -86t-12.5 -86q0 -64 30 -64q20 0 52.5 21t60.5 52q74 81 95 123q26 62 36 134z" id="x1D454"></path></g>
<g transform="matrix(.017,-0,0,-.017,24.787,11.113)"><path d="M535 323h-483v50h483v-50zM535 138h-483v50h483v-50z" id="x3D"></path></g><g transform="matrix(.017,-0,0,-.017,39.474,11.113)"><path d="M384 0h-275v27q67 5 81.5 18.5t14.5 68.5v385q0 38 -7.5 47.5t-40.5 10.5l-48 2v24q85 15 178 52v-521q0 -55 14.5 -68.5t82.5 -18.5v-27z" id="x31"></path></g>
</svg> V at the top in 0.1 V decrement.</table>

Journal of Nanomaterials

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Figure 3

Figure 3: Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects 

Figure 3 | Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects 