Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Figure 4

𝐼_𝑑-𝑉_𝑔 transfer characteristic of n-type and p-type (a) MOSFET and symmetrical n-type and p-type (b) GNRFET FET for |𝑉_𝑑|=0.1 V and |𝑉_𝑑|=1 V.

(a)

(b)