Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Table 1

Design specifications C and S for various channel lengths.

Channel length (nm)	C (nm)	S (nm)	W (nm)
16	30	8	46
32	50	16	82
45	60	20	100
65	90	40	170
90	120	50	220
180	220	100	420