Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

<table class="table-group" id="tab5"><tr><td><table class="table"><tr><td class="thead-hr" colspan="5"><hr/></td></tr><tr class="thead"><td align="left" rowspan="2">Capacitance</td><td align="center" colspan="4">Technology process (nm)</td></tr><tr class="thead"><td align="center">90</td><td align="center">65</td><td align="center">45</td><td align="center">16</td></tr><tr><td class="thead-hr" colspan="5"><hr/></td></tr><tr><td align="left"><svg height="15.6875" id="M104" style="vertical-align:-3.39064pt" version="1.1" viewbox="0 0 24.1625 15.6875" width="24.1625" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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t325.5 101.5q114 0 204 -38z" id="x1D436"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.05,15.475)"><path d="M390 111l17 -21q-34 -45 -80 -73.5t-89 -28.5q-91 0 -146 62t-55 147q0 118 101 195q74 57 149 57h1q59 0 90 -27q16 -14 16 -30q0 -15 -12 -29t-21 -14q-8 0 -19 11q-44 41 -101 41q-52 0 -87.5 -42.5t-35.5 -117.5q0 -49 15 -87t39 -58t49 -30t48 -10q33 0 60.5 12
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</svg>    (pF/m)</td><td align="center">252.32</td><td align="center">206.60</td><td align="center">170.03</td><td align="center">116.99</td></tr><tr><td align="left"><svg height="18.6" id="M105" style="vertical-align:-5.73161pt" version="1.1" viewbox="0 0 29.2875 18.6" width="29.2875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,12.05,15.475)"><path d="M463 437l5 -8q-21 -38 -45 -51l-57 3q30 -35 30 -88q0 -76 -52.5 -118t-122.5 -42q-24 0 -51 5q-30 -21 -30 -42q0 -16 16 -27t47 -11q19 0 54 0.5t52 0.5q36 0 65.5 -8t53.5 -36t24 -74q0 -77 -75 -137.5t-174 -60.5q-79 0 -126 37.5t-48 84.5q0 32 24 56q21 21 83 70
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</svg>   (pF/m)</td><td align="center">226.87</td><td align="center">185.70</td><td align="center">152.76</td><td align="center">105.01</td></tr><tr class="table-tr"><td colspan="5"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

Interconnect capacitances for 16, 45, 65, and 90 nm nodes.

Journal of Nanomaterials

tab5

Table 5

Table 5: Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects 

Table 5 | Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects 