Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Table 7

Propagation delay and average power consumption of GNRFET and MOSFET with L = 16 nm and 1 µm interconnect for various logic gates.

Logic gates	Propagation delay, 𝑡𝑝 (ps)		Average power, 𝑃av (nJ/s)
	GNRFET	MOSFET	GNRFET	MOSFET
Inverter	4.825	14.02	2.90	96.11
Two-input NAND	7.059	44.90	3.13	124.04
Three-input NAND	9.555	58.82	3.24	270.18
Two-input NOR	7.059	44.95	3.07	122.12
Three-input NOR	9.589	58.19	3.24	286.58