Theoretical Study of the Effects of Carrier Transport, Capture, and Escape Processes on Solar Cells with Embedded Nanostructures
Figure 2
Carrier transport (diffusion and drift) times as a function of the width of the intrinsic region for different output voltages of a p-i-n GaAs bulk solar cell. stands for the open-circuit voltage. Note that the carrier transport is mainly limited by the drift process at low-injection conditions while it is limited by the diffusion process at high-injection conditions. The gray area indicates the possible range of carrier transport times.
