Preparation of High Activity Ga and Cu Doped ZnS by Hydrothermal Method for Hydrogen Production under Visible Light Irradiation

Table 1

Properties of ZnS and ZnS doped samples.

Entry	Samples	value^a; (Å)	Lattice parameter, (nm)	Crystallite size, (nm)	Band gap (eV)^d	Surface area (m^2/g)
1	ZnS	3.1121	5.3903	11.76	3.25	57
2	Cu(0.1)-ZnS	3.1068	5.3811	12.51	1.75	39
3	Ga(0.1)-ZnS	3.0857	5.3447	4.48	3.02	113
4	Ga(0.1),Cu(0.01)-ZnS	3.1015	5.3719	4.47	2.48	84
5	Ga(0.1),Cu(0.03)-ZnS	3.1015	5.3719	4.65	2.32	14
6	Ga(0.1),Cu(0.05)-ZnS	3.1015	5.3719	4.80	2.20	12

The value was calculated from .
The value was calculated from .
The value was calculated from Scherrer equation.
The value was obtained from Tauc Plot.