Journal of Nanomaterials

Research Article

Characterization of the Oxides Present in a Polydimethylsiloxane Layer Obtained by Polymerisation of Its Liquid Precursor in Corona Discharge

Table 1

Identification and characterization of IR bands evidenced in the IR reflection-absorption spectra of the PDMS layers generated on Ge, respectively, Al substrate.
Wavenumber
cm−1		IR bandsOxide typeAbsorbance a.u’
GeAl
°°°°°
1110Si–O asymmetrical stretching vibration [14]SiO4 tetrahedra structures [14]0.0190.140.550.650.69
1080Si–O–Si stretching vibration of the siloxane groups [15]  0.0960.270.270.370.39
1070Si–O network stretching vibration [16]SiO2 network0.0480.140.160.170.17
1050Si–O vibrational group [17]SiO1.5 structures [17]0.0380.180.260.300.34
1030Si–O vibrational group [17] SiO0.5 structures [17]0.0230.220.260.280,29
1015Si–O–Si stretching vibrations of the siloxane groups [15] 0.130.310.370.330.34
960Si–OH vibrational group [18]  0.09————
950Si–OH vibrational group [18]  0.04————
920Si–OH vibrational group [18]  0.027————
912Al–OH vibrational group [19] —0.020.020.0260.035
900Al–O vibrational group [19]Al2O3 [17]—0.0330.0260.060.06
875Si–OH vibrational group [18]  —0.0400.0540.10.11
870Ge–O–Ge vibrational group [10, 20]GeO20.017————
860Si–CH3 rocking vibration [14, 16] 0.0370.0670.0840.110.11
852Si–O asymmetric stretching vibration [14]SiO4 tetrahedra structures [14]0.026————
840Si–O asymmetric stretching vibration [14]SiO4 tetrahedra structures [14]0.026——0.050.06
820Si–O–Si bending vibration [21]SiO20.0150.150.380.510.52
815Si–OH vibrational group [18] 0.0210.130.230.310.33
792Si–C stretching vibration [15] 0.0590.400.300.280.28
784Si–O symmetrical stretching vibration [14]SiO4 tetrahedra structures [14]0.0550.180.180.190.19
750Ge–OH vibrational group [10, 20] 0.033————
740Si–O/Si–CH3 vibrational groups [14, 16] 0.019————
660Si–O–Ge vibrational group [10]  ————
570Ge–O–Ge vibrational group [10, 20]GeO2 ————