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Journal of Nanomaterials
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Journal of Nanomaterials
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2015
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Article
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Fig 5
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Research Article
Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices
Figure 5
Universal curves (
versus
plot) for 40 nm PMOS transistors with and without Si capping on SiGe bulk.