Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices

Table 1

Key characteristics of the fabricated Boron-doped SiGe bulk samples.

	Sample number
	#1	#2	#3	#4	#5
GeH4 flow rate (sccm)	520	400	360	400	400
B2H6 flow rate (sccm)	60	60	60	70	40
GeH4/B2H6 flow rate ratio ()	8.67	6.67	6.00	5.71	10.00
Channel strain 〈2, −2, 0〉	−0.88%	−1.42%	−0.80%	−0.60%	−1.50%
SiGe bulk Dep rate (nm/min)	20.6	13.2	8.04	17.9	7.9
Ge content in bulk	35%	33%	29%	29%	35%
Boron content in bulk (cm^−3)