Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates

<div>Schematic of (a) grown epitaxial GaN structures on Si (111) substrates with dispersed MS monolayer and (b) microrod arrays after ICP etching.</div>

Journal of Nanomaterials

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Figure 2: Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates 

Figure 2 | Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates 