Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates

<div>SEM images of regrown GaN structures at (a) 5 min, (b) 12 min, and (c) 20 min.</div>

Journal of Nanomaterials

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Figure 5

Figure 5: Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates 

Figure 5 | Solution-Based High-Density Arrays of Dielectric Microsphere Structures for Improved Crystal Quality of III-Nitride Layers on Si Substrates 