Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

Figure 3

Length of the silicon nanowires obtained from highly doped silicon (100) (ρ < 0.01 Ωcm) as a function of the etching time for different concentrations of the oxidizing agent H₂O₂ (a) and as a function of etching temperatures for different silver nitrate concentration (b). There seems to be a saturation value so that the lengths of the wires are limited to about 50 μm.

(a)

(b)