Strain Driven Phase Decomposition in Ion-Beam Sputtered Pr_1−XCa_XMnO₃ Films

Figure 2

(a) Scheme of an ion-beam sputtering device with Kaufman source, target, and substrate holder. (b) Variation of the Mn excess (Pr, Ca)₁ and Ca excess along the substrate holder (lateral position ). The nominal composition of the target corresponds to and . A 1.9 μm thick film was deposited at °C on MgO in order to measure the composition by means of microprobe. (c) Variation of the Mn excess (Pr, Ca)₁ and Ca content along the substrate holder for 300 nm thick films prepared from the off-stoichiometric target with nominal composition and . Solid symbols correspond to Xe and open symbols correspond to Ar as sputter gas. The composition was measured by means of EDX including a thin film correction.

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