Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near-Field Optical Microscope

Figure 3

(a) SEM image of the line nanopatterns created with the tip of SNOM at scan speeds of 1, 2, 5, 15, 25, and 50 μm/s. The lines were detected in the developed photoresist samples. (b) The lines revealed through ShFM imaging in the irradiated photoresist before development. The average scan speeds of the tip were set at 1, 5, 10, and 15 μm/s. (c) SEM image of the developed photoresist sample. The best achieved resolution in this experiment produced at scan speed of 75 μm/s. The average thickness of the line is 33.23 nm.

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