Electrochemical Bubbling Transfer of Graphene Using a Polymer Support with Encapsulated Air Gap as Permeation Stopping Layer

Figure 5

Room temperature electrical characterization of the graphene. (a) Optical micrograph of the transistor fabricated by photolithography. The yellow parts are the Ti/Au source and drain. The graphene is attached on top of the metals (and the SiO₂/Si), as indicated by the dashed line. The channel is 1 μm × 10 μm. (b) Channel current plotted against applied to the doped silicon. The graphene is slightly p-doped, as implied by the position of the Dirac point .

(a)

(b)