Graphene Synthesis Using a CVD Reactor and a Discontinuous Feed of Gas Precursor at Atmospheric Pressure

Table 1

Overview of CVD processes synthesis.

Substrate	Annealing		Growth conditions				Temperature (°C)	Total time (min)	Ref.
	Gas	Time (min)	Precursor	Flowrate (sccm)	Gas ratio	Pressure (torr)
Cu-p	H2/Ar		CH4	5	1	700	1045	>143	[26]
Cu-p	H2/Ar	30	CH4/Ar	15	1 : 1000	----	1050	125	[27]
Cu-p	H2	30	CH4	----	1	0.15	950	1620	[20]
Cu (111)	H2	5	CH4	35	1	3.9 × 10^−2	1000	60	[21]
Cu-p	H2/Ar	60–180	CH4	----	1 : 1000		1000	180	[28]
Cu-p	H2	20	CH4/H2	50	1 : 1	0.35	1000	60	[29]
Cu-p	H2		CH4/H2	5–20	2 : 1	0.01	1000	180	[30]
Cu-p	H2/Ar	10	CH4/H2	1–8	1 : 20	----	1000		[31]
Cu-p	H2/Ar	5	CH4	----	1	10	1000	21	[27]
Cu-p	H2/Ar	30	CH4/Ar	40	1 : 9	----	950	160	[32]
Ni	H2	20	C2H2/H2	6–36	2 : 1	0.99	900	60	[33]
Cu-p	H2/Ar	20	C2H2/Ar	1–12	12 : 1000	----	1000	150	[34]
Cu-p	H2	40	C2H2/H2	0.28	1 : 280	0.8	1035	95	[35]
Cu-p	H2	60	C2H2	----	1	----	900	720	[36]
Cu-p industrial grade	N2	20	C2H2	30	1	760	1000	66

Cu-p: copper polycrystalline laboratory grade. This work. Standard cubic centimeter per minute. Note. In this table the time cooling and heating is not considered.