Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing

Table 1

Thickness and phase composition of as-deposited “thin” and “thick” PECVD layers.

	“Thin” layer		“Thick” layer
	Composition (%)	Phase thickness (Å)	Composition (%)	Phase thickness (Å)
a-Si	49	26	68	57
c-Si	30	16	15	13
SiO2	21	11	17	14
Total for PECVD silicon layer	100	53	100	84