Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications
1National Institute for Materials Science, Tsukuba, Japan
2University of Oxford, Oxford, UK
3Laboratoire de Genie Electrique de Paris (LGEP), Paris, France
4National Yang Ming University, Taipei, Taiwan
5National Institute of Advanced Industrial Science and Technology (AIST), Tokyo, Japan
Wide-Bandgap Semiconductors: Nanostructures, Defects, and Applications
Description
Nanostructured wide-bandgap (Eg > 2 eV) semiconductors (NWS), such as III-nitrides, SiC, ZnO, TiO2, diamond, BN, and others, have attracted intensive research attention owing to prospective applications in solid-state lighting, solar cells, power electronics, sensors, biological detection, spintronics, and MEMS/NEMS. These nanostructured semiconductors exhibit tremendous advantages in terms of power capability, energy conversion efficiency, optical properties, radiation strength, high temperature, and frequency operation. Although great progress has been achieved in the synthesis of the NWS materials and promising device applications have been demonstrated since the 21st century, much further research in the crystallinity improvement, electronic structure control, impurities doping, and devices design needs to be carried out. The growth dynamics and the defect physics of NWS should be better understood to push forward their potential applications.
The major aims of this special issue are to seek for the recent research in the novel growth strategies of NWS materials and their hybrid structures, the electronic structure tailoring for functionalization, novel devices concepts, devices physics, and applications in various fields. The authors are cordially invited to submit original research papers and review articles reflecting the current progress in nanostructured wide-bandgap semiconductors.
Potential topics include, but are not limited to:
- Growth and fundamentals in the nanostructured wide-bandgap semiconductors or the hybrids such as III-nitrides, SiC, ZnO, TiO2, diamond, BN, and others
- Characterizations and properties (electronic, optical, thermal, mechanical and tribological, magnetic, and electrochemical)
- Dopants, defects, surface, and interface
- Power electronics based on SiC, III-nitrides, and diamond
- Optoelectronic applications: solar cells (perovskite, multijunction, intermediate band, dye-sensitized, etc.), light emitting diodes, laser diode, photodetectors, and photocatalysis
- Sensing devices: physical, chemical, and biological analyses
- MEMS/NEMS
- Nanotoxicity