Emerging Nanomaterial for Future VLSI Nanoelectronics Applications

Call for Papers

To enable the continuous downward scaling of the state-of-the-art Si CMOS technology, heterogeneous integration of dimensional and functional nanomaterials into existing Si technology has become a trend and one of the most important problems to be solved in the coming decades. Emerging nanomaterials, including low-dimensional materials (zero-dimensional nanoparticles, one-dimensional nanotube/nanowire, and two-dimensional nanosheet), self-assembled organic materials, complex metal oxides, III-V compounds, and Ge, provide promising solutions to meet the requirements of future nanoelectronics in terms of density, energy efficiency and reliability. Simultaneously, the integration of the emerging nanomaterials stimulates the emergence of new information processing and storage devices and drives into broader electronic applications, for example, bio-integrated electronics, printable electronics, and wireless sensing electronics. The advances in the future nanoelectronics lie in the understanding of the fundamental properties of the emerging nanomaterials, and controlled fabrication of the heterogeneous integration.

The objective of this special issue is to present recent development on the emerging nanomaterials for future nanoelectronics applications. We invite researchers to contribute original research articles as well as review articles that will stimulate the continuing efforts to understand the properties of emerging nanomaterials and develop controlled methods to fabricate emerging nanomaterials and devices. Potential topics include, but are not limited to:

• Controlled fabrication of emerging nanomaterials (0D nanoparticles, 1D nanotube/nanowire, 2D nanosheet, self-assemble organic, complex metal oxides, III-V compound, and Ge)
• Characterization of emerging nanomaterials
• Modeling and simulation of emerging nanomaterials

Before submission authors should carefully read over the journal's Author Guidelines, which are located at http://www.hindawi.com/journals/jnm/guidelines/. Prospective authors should submit an electronic copy of their complete manuscript through the journal Manuscript Tracking System at http://mts.hindawi.com/submit/journals/jnm/enfn/ according to the following timetable:

Lead Guest Editor

• Yang Chai, Department of Applied Physics, The Hong Kong Polytechnic University Hung Hom, Kowloon, Hong Kong

Guest Editors

• Tian-Ling Ren, Institute of Microelectronics, Tsinghua University Beijing, China
• Lan Wei, Altera Corporation, San Jose, CA, USA
• Hua-Liang Zhang, Department of Electrical Engineering, University of North Texas, Denton, TX, USA
• Michael Z. Hu, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA