Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium

Figure 3

Ge₃N₄ nanowires growing from GeO_𝑥 balls at the initial stage of annealing at 500^∘C ((a), (b)); nanowires growing in the form of a bush (c); the mat of nanowires formed on the Ge source after 2 h of growth.

(a)

(b)

(c)

(d)