On Relation between Porosity of Epitaxial Layer and Quantity of Radiation Defects Generated during Radiation Processing in a Multilayer Structure

Figure 3

Distributions of concentrations of simplest complexes of point radiation defects for fixed value of annealing time. Curve 1 corresponds to implantation of ions of dopant through nonporous epitaxial layer. Curve 2 corresponds to implantation of ions of dopant through porous epitaxial layer. Solid lines are the analytical results. Dashed lines are the numerical results.