Growth of Single-Walled Carbon Nanotubes by Plasma CVD
Figure 6
(a) Raman scattering spectra of SWNTs grown at different growth temperatures. (b) - and (c) - characteristics of TFT devices fabricated with SWNTs grown at 800°C. (d) Typical SEM image of TFT devices with random-network SWNTs grown at 800°C. (e) -/ plot of TFT devices with SWNTs grown at different growth temperatures. (f) Histogram of working device concentration for TFT devices with SWNTs grown at different growth temperatures.
