Cross-sectional SEM image: (a) 80 nm lines and 160 nm spaces was formed on a silicon substrate by UV nanoimprinting under atmospheric pressure, (b) 100 nm lines and 100 spaces was formed on a silicon substrate by UV nanoimprinting under atmospheric pressure, (c) 80 nm lines and 160 nm spaces was fabricated by a deep RIE system after UV nanoimprinting, (d) 100 nm lines and 100 nm spaces was fabricated by a deep RIE system after UV nanoimprinting.
