Review Article

Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

Figure 16

TEM/EDX analysis of heterostructure NW with GaAs QW. (a) Dark-field STEM (DF-STEM) image of NW. (b) DF-STEM image at top of NW of (a) and atomic content profiles for Ga, As, and P measured by EDX. (c) DF-STEM image at center-bottom part of NW and atomic content profiles obtained by EDX.
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