Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
Figure 26
PL peak intensity/wavelength as function of excitation power density. (a) Plots of emission peak intensity (marks with filled squares) at center wavelength of 816 nm and full width at half maximum (FWHM) (marks with filled triangles) of PL spectra. (b) Plots of lasing peak wavelength versus excitation power density. Inset indicates how band bending of conduction band (c. b.) bottom and valence band (v. b.) top change as densities of accumulated photoexcited electrons and holes increase [32].
