Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
Figure 27
Normalized temperature-dependent spectral features recorded from single GaAs/GaAsP nanowire for lasing. (a) PL spectra for lasing recorded at 4.2, 25, 50, 75, 100, and 125 K. (b) Plots of temperature-dependent lasing wavelengths (marks with filled squares). Dependence of temperature on GaAs bandgap is also given in curve for comparison [32].
