Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

Table 1

Far-field optical images of lasing emissions from single GaAs/GaAsP core-shell nanowires. (a)–(c) Observed lasing emissions from different nanowires with lengths of 3.4, 4.5, and 5.5 μm. Incident laser spot is focused perpendicularly at center of nanowires. Scale bars: 5 μm. (d)–(f) Simulated interference patterns for corresponding nanowires in panels (a)–(c), assuming spherical nondirectional emissions from wire end facets [32].