Probing Phonons in Nonpolar Semiconducting Nanowires with Raman Spectroscopy

<table>Second-order Raman spectra of Si nanowires TO phonons as a function of temperature. The numbers in the top panel (1, 2, 3, 4, 5, and 6) refer to Brillouin zone points <svg height="10.6875" id="M101" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 11.4125 10.6875" width="11.4125" xmlns="http://www.w3.org/2000/svg">
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</svg>, respectively. Temperature-dependent second-order Raman spectra of Si obtained using 632.8 nm laser excitation [<a href="/journals/jnt/2012/264198/#B118">113</a>].</table>

Journal of Nanotechnology

fig12

Figure 12

Figure 12: Probing Phonons in Nonpolar Semiconducting Nanowires with Raman Spectroscopy 