Probing Phonons in Nonpolar Semiconducting Nanowires with Raman Spectroscopy

Figure 4

Comparison of experimental Raman profile (thin solid line) and calculated first-order Raman band of highly disordered Si (dashed line). The bold solid line is the calculated phonon density of states (PDOS) for highly disordered Si. The experiment and calculated Raman spectra are in good agreement. The difference in the PDOS and the calculated Raman band shows the importance of matrix element effects [23].